<^.rni-(lonductoi iptoaucfd, line. 20 stern ave. springfield new jersey 07081 /fl^fl irf541, irf542, irf543, rf1s540, rf1s540sm 25a and 28a, 80v and 100v, 0.077 and 0.100 ohm, n-channel power mosfets features description telephone: (973) 376-2922 ? 25a and 28a, 80v and 100v ? rds(on) = 0-077u and o.ioofi ? single pulse avalanche energy rated ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? related literature components to pc boards" ordering information part number IRF540 irf541 irf542 irf543 rf1s540 rf1s540sm package to-220ab to-220ab to-220ab to-220ab to-262aa to-263ab brand IRF540 irf541 irf542 irf543 rf1s540 rf1s540sm these are n-channel enhancement mode silicon gate power field effect transistors. they are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching conver- ters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from intpnrated circuits. symbol go- a s jedec to-220ab drain (flange) jedec to-262aa drain (flange) jedec to-263ab drain (flange) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
absolute maximum ratings tc = 25c, unless otherwise specified IRF540, rf1s540, rf1s540sm drain to source breakdown voltage (note 1) vds 100 drain to gate voltage (rgs = 20kq) (note 1) vdgr 100 continuous drain current id 28 tc= 100c id 20 pulsed drain current (note 3) idm 110 gate to source voltage vgs 20 maximum power dissipation pd 150 dissipation derating factor 1 single pulse avalanche energy rating (note 4) eas 230 operating and storage temperature tj tstg ~55 to 175 maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s tl package body for 10s, see techbrief 334 ipkg 300 260 irf541 80 80 28 20 110 20 150 1 230 -55 to 175 300 260 irf542 100 100 25 17 100 20 150 1 230 -55 to 175 300 260 irf543 80 80 25 17 100 20 150 1 230 -55 to 1 75 300 260 units v v a a a v w w/c mj c c c caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: = 25ctotj = 150c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage IRF540, irf542, rf1s540, rf1s540sm irf541, irf543 gate to threshold voltage zero gate voltage drain current on-state drain current (note 2) IRF540, irf541, rf1s540, rf1s540sm irf542, irf543 gate to source leakage current drain to source on resistance (note 2) IRF540, irf541, rf1s540, rf1s540sm irf542, irf543 forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge symbol bvdss vgs(th) idss 'd(on) igss rds(on) 9fs 'd(on) tf 'd(off) tf q9(tot) qgs qgd test conditions id = 250ua, vgs = ov (figure 10) vgs = vds. id = 250ua vds = rated bvdss, vgs = ov vds = 0.8 x rated bvdss> vgs = ov tj = 150c vds > ^(on) * t>s(on) max. vgs = 10v (figure 7) vgs = 20v id = 17a, vgs = 10v (figures 8, 9) vds ^ 50v. id = 17a (figure 12) vdd = sov id = 28a, rg = g.nj, rl = 1 vu (figures 17, 18) mosfet switching times are essentially independent of operating temperature vgs = 10v, id = 28a, vds = 0.8 x rated bvdss> 'g(ref) = 1-5ma (figures 14, 19, 20) gate charge is essentially independent of op- erating temperature win 100 80 2 - - 28 25 - - 8.7 - - - - - typ - - - - - - - - 0.060 0.080 13 15 70 40 50 38 8 21 max - - 4 25 250 - 100 0.077 0.100 - 23 110 60 75 59 - units v v v ma ha a a na ft ii s ns ns ns ns nc nc nc
electrical specifications tc = 25c, unless otherwise specified (continued) parameter input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol ciss coss crss ld ls rejc reja reja test conditions vds = 25v, vgs = 0v, f = 1mhz (figure 11) measured from the contact screw on tab to center of die measured from the drain lead, 6mm (0.25in) from package to center of die measured from the source lead, 6mm (0.25in) from header to source bonding pad modified mosfet symbol showing the internal devices inductances ?4qj5 free air operation rf1s540sm mounted on fr-4 board with minimum mounting pad min - - - - - - typ 1450 550 100 3.5 4.5 7.5 - - max 1 80 62 units pf pf pf nh nh nh c/w c/w c/w source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 3) source to drain diode voltage (note 2) reverse recovery time reverse recovery charge symbol !sd 'sdm vsd ?rr qrr test conditions modified mosfet sym- bol showing the integral reverse p-n junction diode ?jfc c > d y >s tj = 25c, isd = 27a, vgs = 0v (figure 13) tj = 25c, isd = 28a, dlsd/dt = 100a/(js tj = 25c, isd = 28a, dlso/dt = 100a/us min 70 0.44 typ - - 150 1.0 max 28 110 2.5 300 1.9 units a a v ns uc notes: 2. pulse test: pulse width <300us, duty cycle < 2%. 3. repetitive rating: pulse width limited by maximum junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 25v, starting tj = 25c, l = 440uh, rg = 25h, peak ias = 28a. (figures 15, 16).
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